Output power and its limitation in ridge-waveguide 1.3 μm wavelength quantum-dot lasers

被引：47

作者：

Zhukov, AE ^{[1
]}

Kovsh, AR ^{[1
]}

Livshits, DA ^{[1
]}

Ustinov, VM ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 08期

关键词：

D O I：

10.1088/0268-1242/18/8/310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-threshold (3.7 mA) high-power (150 mW) ridge-waveguide lasers based on 1.3 mum self-organized quantum dots were fabricated and studied at and above room temperature. The output power spectrum of these lasers consists of two components, which correspond to the ground-state (similar to1.29 mum) and the excited-state (similar to1.22 mum) optical transitions. The ground-state component of the lasing mode saturates with increase in the drive current and then persists. Further growth of the total output power is due to the excited-state component. Design criteria of quantum-dot lasers, which maximize the ground-state output power, are considered by solving the carrier-photon rate equations. Current-induced ground-to-excited-state lasing transition is due to a combination of slow carrier capture/relaxation to and efficient thermoionic emission from the ground-state level.

引用

页码：774 / 781

页数：8

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