Gas sensor based on nanosize In2O3:Ga2O3 film

被引：5
作者：
Aleksanyan, M. S. [1 ]
Arakelyan, V. M. [1 ]
Aroutiounian, V. M. [1 ]
Adamyan, A. Z. [1 ]
Shahnazaryan, G. E. [1 ]
机构：
[1] Yerevan State Univ, Yerevan 375049, Armenia
来源：
JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2010年 / 45卷 / 06期
关键词：
gas sensor; In2O3:Ga2O3; nanosize film; sensitivity; LPG DETECTION; THIN-FILMS; SENSING PROPERTIES; METAL-OXIDES; KINETICS; SURFACE; IN2O3;
D O I：
10.3103/S1068337210060071
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Nanosize films of In2O3:Ga2O3 (96:4 weight %) have been deposited on a glassceramic substrate by the method of rf magnetron sputtering. The surfaces of fabricated films were studied with use of a scanning electron microscope; sizes of grains were determined and the thicknesses of films were measured. In order to prepare a gas-sensitive structure, a thin catalytic palladium layer and ohmic comb contacts were deposited on the In2O3:Ga2O3 film surface by the method of ion-plasma sputtering. The sensitivity of sensors based on the glassceramic/In2O3:Ga2O3 (96:4 weight %)/Pd structure to different concentrations of propane and butane gas mixture, as well as to methane was investigated at temperatures of working substance from 250 to 300A degrees C.
引用
收藏
页码：291 / 296
页数：6
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