Planar Hall effect in c-axis textured films of Bi85Sb15 topological insulator

被引：8

作者：

Budhani, Ramesh C. ^{[1
,2
,3
]}

Higgins, Joshua S. ^{[2
,3
]}

McAlmont, Deandre ^{[1
]}

Paglione, Johnpierre ^{[2
,3
]}

机构：

[1] Morgan State Univ, Dept Phys, Baltimore, MD 21251 USA

[2] Univ Maryland, Maryland Quantum Mat Ctr, College Pk, MD 20742 USA

[3] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

AIP ADVANCES | 2021年 / 11卷 / 05期

关键词：

THIN-FILMS; ANISOTROPY;

D O I：

10.1063/5.0049577

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Measurements of the planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) in polycrystalline films of topological insulator Bi85Sb15 are reported. The observation of PHE and AMR in these films of carrier density approximate to 2 x 10(19) electrons/cm(3) is like the behavior of in-plane field transport in thin films of metallic ferromagnets. However, the amplitudes of PHE (Delta rho (PHE)) and AMR (Delta rho (xx)) are at variance. Delta rho (PHE) and Delta rho (xx) also undergo a sign reversal near approximate to 160 K. We compare these results with the reported PHE of topological insulators and Weyl semimetals and discuss possible scenarios for anisotropic backscattering of charge carriers in this non-magnetic alloy.

引用

页数：6

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