Effect of the growth temperature on chemical composition of spray-deposited CuInS2 thin films

被引：17
作者：
Katerski, A. [1 ]
Danilson, M. [1 ]
Mere, A. [1 ]
Krunks, M. [1 ]
机构：
[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia
来源：
PROCEEDINGS OF INORGANIC AND NANOSTRUCTURED PHOTOVOLTAICS | 2010年 / 2卷 / 01期
关键词：
CuInS2; Spray Pyrolysis; Thin Films; X-ray photoelectron spectroscopy; X-ray diffraction; SOLAR-CELLS; PYROLYSIS;
D O I：
10.1016/j.egypro.2010.07.016
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
CuInS2 films were deposited by spray pyrolysis method at 250 degrees C and 350 degrees C using aqueous solutions of CuCl2, InCl3 and SC(NH2)(2) at molar ratio of precursors Cu:In:S=1:1:3 in spray solution. Films were characterized by X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS) techniques. According to XPS, the films grown at 350 degrees C have Cu2+ containing pieces on the surface, the film composition in bulk region is not homogeneous and contains metal bonded oxygen in amount of 5-8 at.%. Deposition at 250 degrees C reduces the content of oxygen down to similar to 1 at. %, the films are low-crystalline with uniform distribution of the elements throughout the film and contain some excess of sulfur compared to stoichiometric CuInS2. (C) 2010 Published by Elsevier Ltd
引用
收藏
页码：103 / 107
页数：5
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