Hybrid IGBT-IGCT Switch

被引：0

作者：

Blinov, Andrei ^{[1
]}

Vinnikov, Dmitri ^{[1
]}

Ivakhno, Volodymyr ^{[2
]}

Zamaruev, Volodymyr ^{[2
]}

机构：

[1] Tallinn Univ Technol, Dept Elect Drives & Power Elect, EE-19086 Tallinn, Estonia

[2] Kharkiv Polytech Inst, Dept Phys & Biomed Elect, UA-61002 Kharkov, Ukraine

来源：

PRZEGLAD ELEKTROTECHNICZNY | 2012年 / 88卷 / 1A期

关键词：

Insulated gate bipolar transistors; insulated gate-commutated thyristors; industrial power systems;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an analysis of a hybrid high-voltage switch based on the parallel connection of IGBT and IGCT. The proposed configuration allows combining the advantages of both semiconductors, resulting in substantially reduced power losses. Such energy efficient switches could be used in high-power systems where decreased cooling system requirements are a major concern. The operation principle of the switch is described and simulated and power dissipation is estimated at different operation conditions.

引用

页码：12 / 15

页数：4

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