Emissive Nature and Molecular Behavior of Zero-Dimensional Organic-Inorganic Metal Halides Bmpip2MX4

被引:34
作者
Sun, Ping-Ping [1 ]
Kripalani, Devesh R. [1 ]
Hao, Mengyao [3 ]
Chi, Weijie [4 ]
Li, Weidong [1 ]
Zhou, Kun [1 ,2 ]
机构
[1] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Environm Proc Modelling Ctr, Nanyang Environm & Water Res Inst, Singapore 639798, Singapore
[3] Beijing Inst Technol, Beijing Key Lab Photoelect Electrophoton Convers, Sch Chem & Chem Engn, Minist Educ,Key Lab Cluster Sci, Beijing 100081, Peoples R China
[4] Singapore Univ Technol & Design, Singapore Sci & Math Cluster, Singapore 487372, Singapore
关键词
PHOTOINDUCED STRUCTURAL-CHANGE; PAIR CREATION ENERGY; BAND-GAPS; PEROVSKITES; EFFICIENT; BIPOLARONS; CHEMISTRY; POLARONS; HLE17;
D O I
10.1021/acs.jpclett.0c01396
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zero-dimensional (0D) organic-inorganic metal halides, with their high stability and broadband emission features, have aroused great interest in optoelectronic applications. Metal halides of the type Bmpip(2)MX(4) (M = Pb, Sn, or Ge; X = I or Br) have 0D disphenoidal coordinated structures that offer an excellent opportunity to investigate their emissive nature and molecular behavior. Herein, the Excitation Emission photophysical properties and carrier transport behavior of 0D Bmpip(2)MX(4) metal halides are studied by using density functional theory. Our results indicate that Bmpip(2)MX(4) metal halides present broadband emission widths and significant Stokes shifts. In particular, Bmpip(2)SnBr(4) possesses the largest Stokes shift (1.981 eV) and the shortest exciton self-trapping time, demonstrating the best photoluminescence emission ability. Bmpip(2)GeI(4) exhibits the lowest electron-hole creation energy and the best photoresponse capacity. Moreover, Bmpip(2)PbI(4) demonstrates superior transport capabilities with high carrier mobilities of 4.56 X 10(-3) and 2.51 X 10(-7) cm(2) V-1 s(-1) for hole and electron carriers, respectively, which makes it comparable even with typical hole transport materials (e.g., RR P3HT, similar to 10(-4) cm(2) V(-1)s(-1)). These findings highlight exciting opportunities for the future development and application of such kinds of 0D metal halides in optoelectronics.
引用
收藏
页码:5234 / 5240
页数:7
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