In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures

被引：20

作者：

Fiori, Alexandre ^{[1
,2
]}

Thu Nhi Tran Thi ^{[1
,2
]}

Chicot, Gauthier ^{[1
,2
]}

Jomard, Francois ^{[3
]}

Omnes, Franck ^{[1
,2
]}

Gheeraert, Etienne ^{[1
,2
]}

Bustarret, Etienne ^{[1
,2
]}

机构：

[1] CNRS, Inst Neel, F-38042 Grenoble, France

[2] Univ Grenoble 1, F-38042 Grenoble, France

[3] UVSQ, CNRS, GEMaC, UMR 8635, F-78035 Versailles, France

来源：

关键词：

Diamond; Delta-doping; Dry etch; SIMS;

D O I：

10.1016/j.diamond.2012.01.018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

One of the main challenges of delta-doping of diamond with boron resides in minimizing the width and optimizing the structural quality of the interface region between the heavily-doped ultra-thin layer and the non intentionally doped high mobility epilayers. In this work, we present an in situ etching-back approach to this problem. In particular, a careful SIMS profiling of the top interface shows that advanced gas switching procedures and adequate in situ O-2 and H-2 plasma etch steps lead to a rising depth lower than 2 nm per decade over 3 to 4 orders of magnitude of boron concentration. A specificity of the present work is that the multilayer structures were obtained without interrupting the microwave plasma during the whole process. (C) 2012 Elsevier B.V. All rights reserved,

引用

页码：175 / 178

页数：4

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