Electrical and thermal properties of SiC-AlN ceramics without sintering additives

被引：53

作者：

Kim, Kwang Joo ^{[1
]}

Kim, Young-Wook ^{[2
]}

Lim, Kwang-Young ^{[2
]}

Nishimura, Toshiyuki ^{[3
]}

Narimatsu, Eiichirou ^{[3
]}

机构：

[1] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

[2] Univ Seoul, Dept Mat Sci & Engn, Funct Ceram Lab, Seoul 130743, South Korea

[3] Natl Inst Mat Sci, Sialon Grp, Sialon Unit, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2015年 / 35卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Silicon carbide; Aluminum nitride; Electrical properties; Thermal properties; ALUMINUM NITRIDE CERAMICS; SILICON-CARBIDE CERAMICS; RARE-EARTH-OXIDE; SOLID-SOLUTION; TEMPERATURE-DEPENDENCE; MECHANICAL-PROPERTIES; CONDUCTIVITY; MICROSTRUCTURE; PHASE; RESISTIVITY;

D O I：

10.1016/j.jeurceramsoc.2015.04.010

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ceramics of SiC-AlN, consisting of alpha-SiC (6H and/or 4H) and 2H SiC-AlN solid solution (2H(ss)), were fabricated by conventional hot-pressing in an Ar atmosphere without sintering additives. The electrical resistivities of the SiC-AlN ceramics were 1.9 x 10(6) Omega cm for 2 vol% AlN, 3.7 x 10(9) Omega cm for 10 vol% AlN, and 1.1 x 10(10) Omega cm for 35 vol% AlN, at room temperature. There was an increasing trend in resistivity with increasing AN content which was most likely due to increased Al impurities at Si site acting as deep acceptors for trapping nitrogen-derived carriers. The thermal conductivity of the SiC-AlN ceramics showed a decreasing trend: 104.1 W/m K at 2 vol% AN, 49.8 W/m K at 10 vol% AN, and 35.1 W/m K at 35 vol% AN content, due to increasing 2H(ss) content in the ceramics. There was a trade-off in improving both the thermal conductivity and electrical resistivity in SiC-AlN ceramics. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：2715 / 2721

页数：7

共 43 条

[1]

BENTSEN LD, 1983, J AM CERAM SOC, V66, pC40, DOI 10.1111/j.1151-2916.1983.tb10029.x

[2] Relationships between microstructure and electrical properties of liquid-phase sintered silicon carbide materials using impedance spectroscopy [J].