Magnetoresistance of ZnO:Co Thin Films at Low Temperatures

被引：1
作者：
Kytin, V. G. [1 ]
Maximova, O. V. [1 ]
Kulbachinskii, V. A. [1 ]
Muftieva, D. A. [1 ]
Burova, L. I. [1 ]
Kaul, A. R. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119991, Russia
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 2016年 / 185卷 / 5-6期
关键词：
Magnetoresistance; Magnetic impurities; Transparent conducting oxides;
D O I：
10.1007/s10909-016-1596-7
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Large positive magnetoresistance was observed in Co-doped thin ZnO films at low temperatures and analyzed in the frame of the model based on the exchange interaction between the conduction electrons and the electrons of a magnetic impurity for the films with temperature dependence of resistivity described by Mott's law. Estimates of the localization length of electronic states participating in hopping conduction were obtained. The obtained values of the localization length are close to the effective Bohr radii of shallow donors in ZnO.
引用
收藏
页码：707 / 711
页数：5
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