Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells

被引：10

作者：

Alaydin, B. O. ^{[1
]}

Ozturk, E. ^{[1
]}

Elagoz, S. ^{[2
]}

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2018年 / 32卷 / 05期

关键词：

Asymmetric triple quantum well; energy levels; interband transition energy; indium concentration; overlap integral of the electron hole pair; CONTINUOUS-WAVE OPERATION; INTERSUBBAND TRANSITIONS; LIGHT EMISSION; LASER; ABSORPTION;

D O I：

10.1142/S0217979218500522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, the optical and electronic properties of asymmetric triple quantum well (ATQW) structures are studied depending on the indium concentrations while quantum well (QW) thicknesses and barrier widths are kept constant. Calculation of electronic properties are done within the framework of the effective mass approximation. The indium concentrations in left quantum well (LQW) and right quantum well (RQW) are varied in order to see the change of energy levels. Then, interband transition energies, wavelengths, oscillator strengths and radiative decay times are determined depending on barrier height. The scope of this study, for the first time in the literature, covers converged interband transition energies for the asymmetric quantum well structures.

引用

页数：16

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