Modeling and Analysis of SiC MOSFET Switching Oscillations

被引：187

作者：

Liu, Tianjiao ^{[1
]}

Ning, Runtao ^{[1
]}

Wong, Thomas T. Y. ^{[1
]}

Shen, Z. John ^{[1
]}

机构：

[1] IIT, Chicago, IL 60616 USA

来源：

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS | 2016年 / 4卷 / 03期

关键词：

Double pulse test; equivalent circuit model; inductive load switching; SiC MOSFET; snubber circuit; switching oscillation; PARASITIC PARAMETERS; GATE VOLTAGE; TURN-OFF; PERFORMANCE;

D O I：

10.1109/JESTPE.2016.2587358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC MOSFETs exhibit extremely fast switching characteristics, which are unfortunately accompanied by undesirable switching oscillations. In this paper, equivalent circuit models incorporating all parasitic elements are developed for the turn-ON and turn-OFF of a SiC MOSFET. Simple mathematical formulas are derived to provide the theoretical analysis of the switching oscillation phenomenon, and to guide the snubber or damping circuit design. Both circuit simulation and experimental measurement are carried out to validate these simple equivalent circuit models.

引用

页码：747 / 756

页数：10

共 32 条

[1] Performance Comparison of SiC Schottky Diodes and Silicon Ultra Fast Recovery Diodes [J].