Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing

被引:94
作者
He, Congli [6 ]
Tang, Jian [1 ,2 ,3 ]
Shang, Da-Shan [7 ]
Tang, Jianshi [8 ,9 ]
Xi, Yue [8 ]
Wang, Shuopei [1 ,2 ,3 ,5 ]
Li, Na [1 ,2 ,3 ]
Zhang, Qingtian [8 ]
Lu, Ji-Kai [7 ]
Wei, Zheng [1 ,2 ,3 ]
Wang, Qinqin [1 ,2 ,3 ]
Shen, Cheng [1 ,2 ,3 ]
Li, Jiawei [1 ,2 ,3 ]
Shen, Shipeng [6 ]
Shen, Jianxin [6 ]
Yang, Rong [1 ,2 ,3 ,4 ,5 ]
Shi, Dongxia [1 ,2 ,3 ,4 ,5 ]
Wu, Huaqiang [8 ,9 ]
Wang, Shouguo [6 ]
Zhang, Guangyu [1 ,2 ,3 ,4 ,5 ]
机构
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China
[4] Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China
[5] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
[6] Beijing Normal Univ, Inst Adv Mat, Beijing 100875, Peoples R China
[7] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
[8] Tsinghua Univ, Beijing Innovat Ctr Future Chips ICFC, Inst Microelect, Beijing 100084, Peoples R China
[9] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China
基金
美国国家科学基金会;
关键词
2D materials; van der Waals heterostructures; MoS2; dual-gate; artificial synapse; neuromorphic computing; MONOLAYER; PLASTICITY; MEMRISTOR; GROWTH;
D O I
10.1021/acsami.9b21747
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional (2D) materials and van der Waals heterostructures have attracted tremendous attention because of their appealing electronic, mechanical, and optoelectronic properties, which offer the possibility to extend the range of functionalities for diverse potential applications. Here, we fabricate a novel multiterminal device with dual-gate based on 2D material van der Waals heterostructures. Such a multiterminal device exhibited excellent nonvolatile multilevel resistance switching performance controlled by the source-drain voltage and backgate voltage. Based on these features, heterosynaptic plasticity, in which the synaptic weight can be tuned by another modulatory interneuron, has been mimicked. A tunable analogue weight update (both on/off ratio and update nonlinearity) of synapse with high speed (50 ns) and low energy (similar to 7.3 fJ) programming has been achieved. These results demonstrate the great potential of the artificial synapse based on van der Waals heterostructures for neuromorphic computing.
引用
收藏
页码:11945 / 11954
页数:10
相关论文
共 55 条
[1]   Synaptic computation [J].
Abbott, LF ;
Regehr, WG .
NATURE, 2004, 431 (7010) :796-803
[2]   Is heterosynaptic modulation essential for stabilizing Hebbian plasticity and memory? [J].
Bailey, CH ;
Giustetto, M ;
Huang, YY ;
Hawkins, RD ;
Kandel, ER .
NATURE REVIEWS NEUROSCIENCE, 2000, 1 (01) :11-20
[3]  
Burr G. W., 2017, ADV PHYS-X, V2, P124
[4]  
Chanthbouala A, 2012, NAT MATER, V11, P860, DOI [10.1038/NMAT3415, 10.1038/nmat3415]
[5]  
Chen J, 2015, 2015 INTERNATIONAL CONFERENCE ON SOCIAL SCIENCE AND ENVIRONMENT (ICSSM 2015), P194
[6]   Low Power Parylene-Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications [J].
Chen, Qingyu ;
Lin, Min ;
Wang, Zongwei ;
Zhao, Xiaolong ;
Cai, Yimao ;
Liu, Qi ;
Fang, Yichen ;
Yang, Yuchao ;
He, Ming ;
Huang, Ru .
ADVANCED ELECTRONIC MATERIALS, 2019, 5 (09)
[7]   Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2 [J].
Chen, Wei ;
Zhao, Jing ;
Zhang, Jing ;
Gu, Lin ;
Yang, Zhenzhong ;
Li, Xiaomin ;
Yu, Hua ;
Zhu, Xuetao ;
Yang, Rong ;
Shi, Dongxia ;
Lin, Xuechun ;
Guo, Jiandong ;
Bai, Xuedong ;
Zhang, Guangyu .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2015, 137 (50) :15632-15635
[8]   Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets [J].
Cheng, Peifu ;
Sun, Kai ;
Hu, Yun Hang .
NANO LETTERS, 2016, 16 (01) :572-576
[9]   Heterosynaptic Plasticity: Multiple Mechanisms and Multiple Roles [J].
Chistiakova, Marina ;
Bannon, Nicholas M. ;
Bazhenov, Maxim ;
Volgushev, Maxim .
NEUROSCIENTIST, 2014, 20 (05) :483-498
[10]   Field emission and current-voltage properties of boron nitride nanotubes [J].
Cumings, J ;
Zettl, A .
SOLID STATE COMMUNICATIONS, 2004, 129 (10) :661-664