20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96μm

被引:37
作者
Crump, P. [1 ]
Blume, G. [1 ]
Paschke, K. [1 ]
Staske, R. [1 ]
Pietrzak, A. [1 ]
Zeimer, U. [1 ]
Einfeldt, S. [1 ]
Ginolas, A. [1 ]
Bugge, F. [1 ]
Haeusler, K. [1 ]
Ressel, P. [1 ]
Wenzel, H. [1 ]
Erbert, G. [1 ]
机构
[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany
来源
HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VII | 2009年 / 7198卷
关键词
diode lasers; high optical power; limitations and failure mechanisms; reliability; POWER;
D O I
10.1117/12.807263
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
High power broad area diode lasers provide the optical energy for all high performance solid state and fiber laser systems. The maximum achievable power density from such systems is limited at source by the performance of the diode lasers. A crucial metric is the reliable continuous wave optical output power from a single broad area laser diode, typically for stripe widths in the 90-100 mu m range, which is especially important for users relying on fibered multi-mode pumps. We present the results of a study investigating the reliable power limits of such 980nm sources. We find that 96 mu m stripe single emitters lasers at 20 degrees C operate under continuous wave power of 20W per emitter for over 4000 hours (to date) without failure, with 60 mu m stripe devices operating reliably at 10W per stripe. Maximum power testing under 10Hz, 200 mu s QCW drive conditions shows that 96 mu m stripes reach 30W and 60 mu m stripes 21W per emitter, significantly above the reliable operation point. Results are also presented on step-stress-studies, where the current is step-wise increased until failure is observed, in order to clarify the remaining reliability limits. Finally, we detail the barriers to increased peak power and discuss how these can be overcome.
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页数:9
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共 18 条
  • [1] Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers
    Botez, D
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (21) : 3102 - 3104
  • [2] Brauch U, 2000, TOP APPL PHYS, V78, P303
  • [3] ERBERT G, 2000, TOP APPL PHYS, V78, P303
  • [4] FIEBIG C, 2008, P SOC PHOTO-OPT INS, V6876
  • [5] HAUSLER K, 2008, J MATER SCI-MATER EL, P9534
  • [6] Brilliant high power laser bars for industrial applications
    Koenig, Harald
    Groenninger, Guenther
    Brick, Peter
    Reufer, Martin
    Bugge, Frank
    Erbert, Goetz
    Stoiber, Michael
    Biesenbach, Jens
    Lorenzen, Dirk
    Hennig, Petra
    Strauss, Uwe
    [J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VI, 2008, 6876
  • [7] Brilliant high-power diode lasers based on broad area lasers
    Krause, V.
    Koesters, A.
    Koenig, H.
    Strauss, U.
    [J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VI, 2008, 6876
  • [8] Mode control for high performance laser diode sources - art. no. 69520C
    Leisher, Paul
    Price, Kirk
    Bashar, Shabbir
    Bao, Ling
    Huang, Hua
    Wang, Jun
    Wise, Damian
    Zhang, Shiguo
    Das, Suhit
    DeFranza, Mark
    Hodges, Aaron
    Trifan, Utsu
    Balsley, David
    Dong, Weimin
    Grimshaw, Mike
    DeVito, Mark
    Bell, Jake
    Martinsen, Rob
    Fam-Ior, Jason
    Crump, Paul
    Patterson, Steve
    [J]. LASER SOURCE TECHNOLOGY FOR DEFENSE AND SECURITY IV, 2008, 6952 : C9520 - C9520
  • [9] Recent developments for BAR and BASE:: Setting the trends
    Lichtenstein, Norbert
    Krejci, Martin
    Manz, Yvonne
    Boucart, Julien
    Valk, Bernd
    Mueller, Jurgen
    Button, Chris
    Weiss, Stefan
    Pawlik, Susanne
    Sverdlov, Boris
    [J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VI, 2008, 6876
  • [10] Thermal management strategies for high power semiconductor pump lasers
    Liu, Xingsheng
    Hu, Martin H.
    Caneau, Catherine G.
    Bhat, Rajaram
    Zah, Chung-En
    [J]. IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2006, 29 (02): : 268 - 276