Influence of γ-radiation doses on the properties of TeOx: (x=2-3) thin film

被引：6
作者：
Dewan, Namrata [1 ]
Sreenivas, K. [1 ]
Gupta, Vinay [1 ]
机构：
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 04期
关键词：
D O I：
10.1063/1.2769778
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of gamma-ray doses (10-50 Gy) on the optical and electrical properties of radio-frequency sputtered tellurium dioxide (TeOx) thin film was studied. The composition of the as-deposited TeOx films deposited under 25% oxygen and 100% oxygen in the sputtering gas mixture (Ar+O-2) was x=2 and 3, respectively. TeO3 films were found to be highly sensitive to the gamma-radiation doses and the value of optical band gap decrease from 4.18 to 3.56 eV with increasing radiation dose from 10 to 50 Gy. Current-voltage characteristics of the films showed an increase in the value of conductivity with increasing radiation doses. Monotonic decrease in the values of dielectric constant for the deposited films with increase in radiation dose was observed. The effect of gamma-ray doses on the properties of TeOx film has been correlated with the rearrangement of the bipyramidal structure of amorphous TeOx thin film. (C) 2007 American Institute of Physics.
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