Design of Multioctave Bandwidth Power Amplifier Based on Resistive Second-Harmonic Impedance Continuous Class-F

被引：39

作者：

Huang, Hang ^{[1
]}

Zhang, Bo ^{[1
]}

Yu, Cuiping ^{[1
]}

Gao, Jinchun ^{[1
]}

Wu, Yongle ^{[1
]}

Liu, Yuanan ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, Beijing 100876, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 09期

关键词：

Continuous class-F; GaN; high efficiency; high power; multioctave bandwidth; power amplifier (PA);

D O I：

10.1109/LMWC.2017.2734764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a generic method is presented for multioctave power amplifier (PA) based on extended version of the continuous class-F. The theory allows resistive second-harmonic impedance and sacrifices part of efficiency to get a bandwidth over one octave. A high-voltage GaN HEMT is adopted to achieve high output power and drain efficiency. Finally, a 0.2-2.5 GHz miniature multioctave PA is designed and fabricated. Experimental results show the drain efficiency of 55.5%-70.3% and the output power of 43.7-46.9 dBm across 0.2-2.5 GHz (170%). The compact size of the proposed PA can also be observed with only 2.6 cm x 5.5 cm, which is greatly reduced compared with other PAs with similar performances.

引用

页码：830 / 832

页数：3

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