Spin transport properties based on spin gapless semiconductor CoFeMnSi

被引：48

作者：

Han, Jiangchao

Feng, Yulin

Yao, Kailun

Gao, G. Y. ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Hubei, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 13期

基金：

中国国家自然科学基金;

关键词：

HALF-METALLIC FERROMAGNETS; SPINTRONICS;

D O I：

10.1063/1.4999288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin gapless semiconductors have been regarded as the most promising candidates for spin injection materials due to the complete (100%) spin polarization and the conductivity between half-metals and semiconductors. To explore the potential spintronic applications of the quaternary Heusler alloy CoFeMnSi (CFMS), a recently fabricated spin gapless semiconductor with a high Curie temperature of 620 K, we design the GaAs/CFMS heterostructure and the CFMS/GaAs/CFMS magnetic tunnel junction (MTJ). It is found from the first-principles calculations combined with nonequilibrium Green's function that the heterostructure exhibits an excellent spin filtering effect and spin diode effect and the MTJ has a large tunnel magnetoresistance ratio (up to 2 x 10(3)), which are explained from the calculated spin-dependent band structure and transmission spectrum. These perfect spin transport characteristics make CFMS a promising candidate for spintronic applications. Published by AIP Publishing.

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页数：4

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