Effects of crystal-crucible iso-rotation and a balanced/unbalanced cusp magnetic field on the heat, flow, and oxygen transport in a Czochralski silicon melt

被引:15
作者
Thi-Hoai-Thu Nguyen [1 ,3 ]
Chen, Jyh-Chen [1 ]
Hu, Chieh [1 ]
Chen, Chun-Hung [2 ]
机构
[1] Natl Cent Univ, Taoyuan, Taiwan
[2] GlobalWafers Co Ltd, Hsinchu, Taiwan
[3] Nong Lam Univ, Ho Chi Minh City, Vietnam
关键词
Computer simulation; Magnetic field; Mass transfer; Convection; Czochralski method; NUMERICAL-SIMULATION; GROWTH;
D O I
10.1016/j.jcrysgro.2019.125373
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The effects of using a balanced/unbalanced cusp magnetic field (CMF) along with crystal-crucible counter-/iso-rotation on the heat, flow, and oxygen distributions during Czochralski (Cz) growth of an 8-inch silicon crystal are numerically investigated. One counter-rotation example is compared to iso-rotation cases. In both rotation modes, the vertical flow in the central melt region is strengthened while the buoyancy-driven melt flow is weakened under a cusp field. The CMF has a stronger effect on the oxygen content when there is a large difference in rotation rate between the crystal and the crucible (n(S) - n(C)). This is because a higher value of (n(S) - n(C)) induces stronger melt convection and hence, the Lorentz force has a more significant effect on a fast melt flow than a slow one. Although diffusion significantly influences oxygen transport in the melt at low crystal iso-rotation rates, different flow patterns and local melt velocities induced by different crystal iso-rotation speeds will modify the oxygen distribution. There is a slight change in the oxygen content at a low ingot iso-rotation rate with a CMF. In cases of iso-rotation, the radial oxygen content is enhanced more by an unbalanced CMF than a balanced one. Greater uniformity of the radial oxygen concentration is achieved applying iso-rotation with n(S) > n(C) under a CMF.
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页数:9
相关论文
共 19 条
[1]  
[Anonymous], 2011, CGSIM FLOW MOD THEOR
[2]   OXYGEN PRECIPITATION IN SILICON [J].
BORGHESI, A ;
PIVAC, B ;
SASSELLA, A ;
STELLA, A .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4169-4244
[3]   Numerical simulation of oxygen transport during the Czochralski silicon crystal growth with a cusp magnetic field [J].
Chen, J. -C. ;
Guo, P. -C. ;
Chang, C. -H. ;
Teng, Y. -Y. ;
Hsu, C. ;
Wang, H. -M. ;
Liu, C. -C. .
JOURNAL OF CRYSTAL GROWTH, 2014, 401 :888-894
[4]   Numerical simulation of oxygen transport during the CZ silicon crystal growth process [J].
Chen, Jyh-Chen ;
Teng, Ying-Yang ;
Wun, Wan-Ting ;
Lu, Chung-Wei ;
Chen, Hsueh-I ;
Chen, Chi-Yung ;
Lan, Wen-Chieh .
JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) :318-323
[5]   The effects of several growth parameters on the formation behavior of point defects in Czochralski-grown silicon crystals [J].
Cho, Hyon-Jong ;
Lee, Bo-Young ;
Lee, Jeong Yong .
JOURNAL OF CRYSTAL GROWTH, 2006, 292 (02) :260-265
[6]   Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth [J].
Daggolu, Parthiv ;
Ryu, Jae Woo ;
Galyukov, Alex ;
Kondratyev, Alexey .
JOURNAL OF CRYSTAL GROWTH, 2016, 452 :22-26
[7]  
Gunjal P., 2009, 7 INT C CFD MIN PROC, P1
[8]   Effect of zero-Gauss plane and magnetic intensity on oxygen concentration in cusp-magnetic CZ crystals [J].
Hong, Young-Ho ;
Sim, Bok-Cheol ;
Shim, Kwang-Bo .
JOURNAL OF CRYSTAL GROWTH, 2006, 295 (02) :141-147
[9]   Effect of asymmetric magnetic fields on crystal-melt interface in silicon CZ process [J].
Hong, Young-Ho ;
Nam, Byung-Wook ;
Sim, Bok-Cheol .
JOURNAL OF CRYSTAL GROWTH, 2013, 366 :95-100
[10]   Use of an inhomogeneous magnetic field for silicon crystal growth [J].
Kakimoto, K ;
Eguchi, M ;
Ozoe, H .
JOURNAL OF CRYSTAL GROWTH, 1997, 180 (3-4) :442-449