Optical and structural studies of homoepitaxially grown m-plane GaN

被引：11

作者：

Khromov, S. ^{[1
]}

Monemar, B. ^{[1
]}

Avrutin, V. ^{[2
,3
]}

Li, Xing ^{[2
,3
]}

Morkoc, H. ^{[2
,3
]}

Hultman, L. ^{[1
]}

Pozina, G. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, IFM, S-58183 Linkoping, Sweden

[2] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

[3] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 17期

基金：

美国国家科学基金会; 瑞典研究理事会;

关键词：

LIGHT-EMITTING-DIODES; PHOTOLUMINESCENCE; NONPOLAR; LUMINESCENCE;

D O I：

10.1063/1.4706258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cathodoluminescence (CL) and transmission electron microscopy studies of homoepitaxially grown m-plane Mg-doped GaN layers are reported. Layers contain basal plane and prismatic stacking faults (SFs) with similar to 10(6) cm(-1) density. Broad emission peaks commonly ascribed to SFs were found to be insignificant in these samples. A set of quite strong, sharp lines were detected in the same spectral region of 3.36-3.42 eV. The observed peaks are tentatively explained as excitons bound to some impurity defects, which can also be related to SFs. Donor-acceptor pair (DAP) recombination involving Si or O and Mg was ruled out by fitting DAP energies and CL mapping. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4706258]

引用

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