Photoluminescence Characteristics of Sr3SiO5:Eu2+ Yellow Phosphors Synthesized by Solid-State Method and Pechini Process
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作者:
Kang, Eun-Hee
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Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
Seoul Natl Univ, Res Inst Adv Mat, Seoul 151744, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
Kang, Eun-Hee
[1
,2
]
Choi, Sung-Woo
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Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
Seoul Natl Univ, Res Inst Adv Mat, Seoul 151744, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
Choi, Sung-Woo
[1
,2
]
Chung, Su Eun
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Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
Chung, Su Eun
[3
]
Jang, Jisung
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Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
Jang, Jisung
[3
]
Kwon, Sunghoon
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Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
Kwon, Sunghoon
[3
]
Hong, Seong-Hyeon
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Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
Seoul Natl Univ, Res Inst Adv Mat, Seoul 151744, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
Hong, Seong-Hyeon
[1
,2
]
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[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
[2] Seoul Natl Univ, Res Inst Adv Mat, Seoul 151744, South Korea
[3] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Yellow-emitting Sr(3-x)EuxSiO(5) (x = 0 similar to 0.1) phosphors were synthesized by solid-state reaction method and Pechini process, and the phase, morphology, photoluminescence (PL) properties were investigated. In solid-state method, Sr3SiO5 was obtained with a small amount of Sr2SiO4, but a single phase Eu-doped Sr3SiO5 was realized at 1600 degrees C in Pechini process. The phosphor prepared by Pechini process had a rather round shape with a smooth surface and a smaller size distribution. The obtained Sr3-xEuxSiO5 phosphors exhibited a strong emission at 581 nm under the excitation of lambda(exc) = 460 nm. The highest PL intensity was observed in Sr3-xEuxSiO5 (x = 0.05) prepared by Pechini process at 1600 degrees C. The obtained PL properties were discussed in terms of phase purity, particle size and shape, surface roughness, and effect of concentration quenching. In addition, the temperature dependence of the PL intensity and the emission characteristics of white light-emitting InGaN-based Sr3-xEuxSiO5 LED were compared with those of commercial YAG:Ce3+ phosphor. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.016111jes] All rights reserved.
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Jang, Ho Seong
;
Jeon, Duk Young
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Jang, Ho Seong
;
Won, Yu-Ho
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Won, Yu-Ho
;
Vaidyanathan, Sivakumar
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Vaidyanathan, Sivakumar
;
Kim, Dong Hyuk
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, Dong Hyuk
;
Jeon, Duk Young
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Jang, Ho Seong
;
Jeon, Duk Young
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Jang, Ho Seong
;
Won, Yu-Ho
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Won, Yu-Ho
;
Vaidyanathan, Sivakumar
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Vaidyanathan, Sivakumar
;
Kim, Dong Hyuk
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机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, Dong Hyuk
;
Jeon, Duk Young
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机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea