Role of surface defects in colloidal cadmium selenide (CdSe) nanocrystals in the specificity of fluorescence quenching by metal cations

被引:16
作者
Mrad, Randa [1 ]
Poggi, Melanie [2 ]
Ben Chaabane, Rafik [1 ]
Negrerie, Michel [3 ]
机构
[1] Fac Sci Monastir, Lab Interfaces & Mat Avances, Bd Environm, Monastir 5019, Tunisia
[2] Ecole Polytech, Lab Phys Mat Condensee, CNRS, UMR7643, F-91120 Palaiseau, France
[3] Ecole Polytech, Lab Opt & Biosci, CNRS, INSERM,U1182,UMR7645, F-91120 Palaiseau, France
关键词
Colloidal quantum dots; Surface defects; Excitonic relaxation; Metal cations; Fluorescence quenching; SEMICONDUCTOR QUANTUM DOTS; CORE/SHELL NANOCRYSTALS; OPTICAL-PROPERTIES; COPPER IONS; L-CYSTEINE; EXCITON; LIGAND; NANOPARTICLES; WATER; DENSITY;
D O I
10.1016/j.jcis.2020.03.058
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This study aimed to answer the question as whether crystal defects at the surface of soluble capped CdSe nanocrystals (or quantum dots, QDs) in water colloidal suspension are involved in the mechanism of fluorescence quenching induced by metal cations. Nanocrystals of CdSe were synthesized by an aqueous protocol, varying the ratio between the CdSe precursors and the grafted ligand mercaptosuccinic acid (MSA). Changing the MSA/CdSe ratio during synthesis impacts the crystal nucleation growth, which plays an important role in surface construction of CdSe QDs and changes the surface state. In this way, we could modulate the crystal surface defects of CdSe, as verified by analysis of the individual bands which constitute the emission spectra and are associated with different relaxation processes. We found that the various tested metal cations, which interact in solution with the MSA ligand grafted on the QDs, quench their fluorescence differently, depending on the MSA/CdSe ratio used in synthesis. The crystal defects modulate the excitonic relaxation in CdSe and we demonstrated here that the surface defects intervene in the quenching of QDs induced by the binding of cations. (C) 2020 Elsevier Inc. All rights reserved.
引用
收藏
页码:368 / 377
页数:10
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