High-Responsivity Deep-Ultraviolet-Selective Photodetectors Using Ultrathin Gallium Oxide Films

被引:165
作者
Lee, Seung Hyun [1 ,2 ]
Kim, Soo Bin [1 ,2 ]
Moon, Yoon-Jong [3 ]
Kim, Sung Min [1 ,2 ]
Jung, Hae Jun [1 ,2 ]
Seo, Myung Su [1 ,2 ]
Lee, Kang Min [1 ,2 ]
Kim, Sun-Kyung [3 ]
Lee, Sang Woon [1 ,2 ]
机构
[1] Ajou Univ, Dept Energy Syst Res, Gyeonggi Do 16499, South Korea
[2] Ajou Univ, Dept Phys, Gyeonggi Do 16499, South Korea
[3] Kyung Hee Univ, Dept Appl Phys, Gyeonggi Do 17104, South Korea
基金
新加坡国家研究基金会;
关键词
photodetectors; amorphous gallium oxide; deep-ultraviolet wavelengths; flexible optoelectronic devices; wide band gap materials; atomic layer deposition; SOLAR-BLIND PHOTODETECTORS; UV PHOTODETECTORS; BETA-GA2O3; PHOTORESPONSE; TEMPLATES; DETECTORS; NANOWIRES; LAYERS;
D O I
10.1021/acsphotonics.7b01054
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Wavelength-selective photodetectors responding to deep-ultraviolet (DUV) wavelengths (lambda = 200-300 nm) are drawing significant interest in diverse sensing applications, ranging from micrometer biological molecules to massive military missiles. However, most DUV photodetectors developed thus far have suffered from long response times, low sensitivity, and high processing temperatures, impeding their practical use. Here, we report fast, high-responsivity, and general-substrate-compatible DUV photodetectors based on ultrathin (3-50 nm) amorphous gallium oxide (GaOx) films grown by low-temperature (similar to<250 degrees C) atomic layer deposition (ALD) for the first time. ALD-grown GaOx films on glass substrates display a typical amorphous nature, which is identified by electron beam diffraction and X-ray diffraction measurements, while their band gap is sharply featured at similar to 4.8 eV. Metal-semiconductor-metal photodetectors (active area of 30 X 30 mu m(2)) using the 30-nm-thick GaOx films work reliably only for DUV wavelengths; the responsivity is maximized to 45.11 A/W at lambda = 253 nm, which dropped off at lambda approximate to 300 nm (i.e., a cutoff wavelength). The dark current measured at 10 V is as low as 200 pA and the signal-to-noise ratio reaches up to similar to 10(4), underpinning the pristine material quality of the ALD-grown GaOx films. In addition, the rise time (i.e., the time interval for photocurrent to increase from 10% to 90%) is as quick as 2.97 mu s at lambda = 266 nm. Such a reliable and fast photoresponse is achieved for even atomically thin (similar to 3nm) devices. The substrate-compatible and low-temperature ALD growth permits the demonstration of flexible DUV photodetectors using amorphous GaOx films grown on polyimide substrates, suggesting their facile integration into other curved optoelectronic systems. We believe that photodetectors developed herein will provide an economically viable solution for high-performance DUV detection and create a variety of sensing applications.
引用
收藏
页码:2937 / 2943
页数:7
相关论文
共 30 条
[1]   Recent advances in ultraviolet photodetectors [J].
Alaie, Z. ;
Nejad, S. Mohammad ;
Yousefi, M. H. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 29 :16-55
[2]   Ultrasensitive Self-Powered Solar-Blind Deep-Ultraviolet Photodetector Based on All-Solid-State Polyaniline/MgZnO Bilayer [J].
Chen, Hongyu ;
Yu, Pingping ;
Zhang, Zhenzhong ;
Teng, Feng ;
Zheng, Lingxia ;
Hu, Kai ;
Fang, Xiaosheng .
SMALL, 2016, 12 (42) :5809-5816
[3]   Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction [J].
Chen, Xing ;
Liu, Kewei ;
Zhang, Zhenzhong ;
Wang, Chunrui ;
Li, Binghui ;
Zhao, Haifeng ;
Zhao, Dongxu ;
Shen, Dezhen .
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (06) :4185-4191
[4]   Biological effects of high ultraviolet radiation on early Earth - a theoretical evaluation [J].
Cockell, CS .
JOURNAL OF THEORETICAL BIOLOGY, 1998, 193 (04) :717-729
[5]   Atomic Layer Deposition of Ga2O3 Films Using Trimethylgallium and Ozone [J].
Comstock, David J. ;
Elam, Jeffrey W. .
CHEMISTRY OF MATERIALS, 2012, 24 (21) :4011-4018
[6]   Factors influencing ultraviolet disinfection performance part II: Association of coliform bacteria with wastewater particles [J].
Emerick, RW ;
Loge, FJ ;
Thompson, D ;
Darby, JL .
WATER ENVIRONMENT RESEARCH, 1999, 71 (06) :1178-1187
[7]   Atomic Layer Deposition: An Overview [J].
George, Steven M. .
CHEMICAL REVIEWS, 2010, 110 (01) :111-131
[8]   Intrinsic Tryptophan Fluorescence in the Detection and Analysis of Proteins: A Focus on Forster Resonance Energy Transfer Techniques [J].
Ghisaidoobe, Amar B. T. ;
Chung, Sang J. .
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES, 2014, 15 (12) :22518-22538
[9]   Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors [J].
Guo, D. Y. ;
Wu, Z. P. ;
An, Y. H. ;
Guo, X. C. ;
Chu, X. L. ;
Sun, C. L. ;
Li, L. H. ;
Li, P. G. ;
Tang, W. H. .
APPLIED PHYSICS LETTERS, 2014, 105 (02)
[10]   Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction [J].
Guo, Daoyou ;
Liu, Han ;
Li, Peigang ;
Wu, Zhenping ;
Wang, Shunli ;
Cui, Can ;
Li, Chaorong ;
Tang, Weihua .
ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (02) :1619-1628