Low-threshold green laser heterostructures with Zn(Mg)SSe/ZnSe graded-index superlattice waveguide: Structural and optical properties

被引：12

作者：

Sedova, I. V. ^{[1
]}

Lutsenko, E. V. ^{[2
]}

Gronin, S. V. ^{[1
]}

Sorokin, S. V. ^{[1
]}

Vainilovich, A. G. ^{[2
]}

Sitnikova, A. A. ^{[1
]}

Yablonskii, G. P. ^{[2
]}

Alyamani, A. ^{[3
]}

Fedorov, D. L. ^{[4
]}

Kop'ev, P. S. ^{[1
]}

Ivanov, S. V. ^{[1
]}

机构：

[1] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] NASB, BI Stepanov Phys Inst, Minsk 220072, BELARUS

[3] KACST, Nat Nanotechnol Ctr, Riyadh 11442, Saudi Arabia

[4] Ustinov Balt State Tech Univ, St Petersburg 190005, Russia

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 17期

关键词：

ACTIVE-REGION; DIODES;

D O I：

10.1063/1.3579543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on structural and optical properties of green (lambda similar to 520 nm) ZnCdSe/ZnMgSSe optically pumped laser heterostructures with a Zn(Mg)SSe/ZnSe graded-index superlattice (SL) waveguide, grown by molecular beam epitaxy. The pseudomorphic 400 nm thick waveguide comprising a set of strained ZnMgSSe/ZnSe and ZnSSe/ZnSe SLs of different periods and barrier-to-well thickness ratios at each side of a ZnCdSe quantum well (QW) active region provides efficient transport of nonequilibrium carriers to the QW. This results in reduction in laser threshold down to the extremely low value of 1.5 kW/cm(2) at 300 K and increasing the external quantum efficiency above 44%. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3579543]

引用

页数：3

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