Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications

被引：9

作者：

Akmaldinov, Kamil ^{[1
,2
,3
,4
]}

Frangou, Lamprini ^{[1
,2
,3
]}

Ducruet, Clarisse ^{[4
]}

Portemont, Celine ^{[4
]}

Pereira, Jeremy ^{[4
]}

Joumard, Isabelle ^{[1
,2
,3
]}

Dieny, Bernard ^{[1
,2
,3
]}

Alvarez-Herault, Jeremy ^{[4
]}

Baltz, Vincent ^{[1
,2
,3
]}

机构：

[1] Univ Grenoble Alpes, SPINTEC, F-38000 Grenoble, France

[2] CNRS, SPINTEC, F-38000 Grenoble, France

[3] CEA Grenoble, INAC SPINTEC, F-38000 Grenoble, France

[4] CROCUS Technol, F-38000 Grenoble, France

来源：

IEEE MAGNETICS LETTERS | 2015年 / 6卷

关键词：

Spin electronics; disordered magnetic phases; exchange bias; device variability; magnetic random-access memory; blocking temperature distribution; ANISOTROPY; SPINS;

D O I：

10.1109/LMAG.2015.2452891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated.

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页数：4

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