2D materials and heterostructures for applications in optoelectronics

被引：3

作者：

Mueller, Thomas ^{[1
]}

Pospischil, Andreas ^{[1
]}

Furchi, Marco M. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Photon, A-1040 Vienna, Austria

来源：

MICRO- AND NANOTECHNOLOGY SENSORS, SYSTEMS, AND APPLICATIONS VII | 2015年 / 9467卷

基金：

奥地利科学基金会;

关键词：

transition metal dichalcogenides; p-n junctions; van der Waals heterostructures; GRAPHENE; MOS2;

D O I：

10.1117/12.2176848

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the realization and optoelectronic characterization of p-n junctions based on two-dimensional semiconductors. Such junctions may be realized by lateral or vertical arrangement of atomically thin p-type and n-type materials. In particular, a WSe2 monolayer p-n junction, formed by electrostatic doping using a pair of split gate electrodes, and a MoS2/WSe2 van der Waals type-II heterojunction are presented. Upon optical illumination, conversion of light into electrical energy occurs in both devices. Under forward bias, electrically driven light emission is achieved. Measurements of the electrical characteristics, the photovoltaic properties, and the gate voltage dependence of the photoresponse will be discussed.

引用

页数：6

共 10 条

[1] Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction [J].