Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers

被引：21

作者：

Kim, SangHyeon ^{[1
]}

Yokoyama, Masafumi ^{[1
]}

Taoka, Noriyuki ^{[1
]}

Iida, Ryo ^{[1
]}

Lee, Sunghoon ^{[1
]}

Nakane, Ryosho ^{[1
]}

Urabe, Yuji ^{[2
]}

Miyata, Noriyuki ^{[2
]}

Yasuda, Tetsuji ^{[2
]}

Yamada, Hisashi ^{[3
]}

Fukuhara, Noboru ^{[3
]}

Hata, Masahiko ^{[3
]}

Takenaka, Mitsuru ^{[1
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Sumitomo Chem Co Ltd, Tsukuba, Ibaraki 3003294, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 01期

关键词：

GATE;

D O I：

10.1143/APEX.5.014201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron mobility enhancement of extremely thin body In0.7Ga0.3As-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) on Si substrates by using In0.3Ga0.7As MOS interface buffer layers was demonstrated. The MOSFETs with the InGaAs thickness of 2/5/3 nm have exhibited the electron mobility of 2810 cm(2) V-1 s(-1) with an enhancement factor of 4.2 against that of Si MOSFET. We have examined the body thickness (T-body) dependence of the electron mobility. It was found that a channel thickness fluctuation scattering mechanism strongly affects the mobility in T-body of around 10 nm and thinner. The formation of a uniform and flat InGaAs-OI wafer is required for further improvements. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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