Bias Generation and Calibration of CMOS Charge Qubits at 3.5 Kelvin in 22-nm FDSOI

被引：2

作者：

Bashir, Imran ^{[1
]}

Leipold, Dirk ^{[1
]}

Asker, Mike ^{[1
]}

Esmailiyan, Ali ^{[3
]}

Blokhina, Elena ^{[2
,3
]}

Redmond, David ^{[3
]}

Giounanlis, Panagiotis ^{[3
]}

Andrade-Miceli, Dennis ^{[2
,3
]}

Staszewski, Bogdan ^{[2
,3
]}

机构：

[1] Equal1 Labs, Fremont, CA 94536 USA

[2] Univ Coll Dublin, Dublin 4, Ireland

[3] Univ Coll Dublin, NovaUCD, Equal1, Belfield Innovat Pk, Dublin 4, Ireland

来源：

ESSCIRC 2021 - IEEE 47TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC) | 2021年

关键词：

Single-electron injection; cryogenic circuits; position-based charge qubit; quantum computer; quantum point contact (QPC); quantum dot (QD); fully depleted silicon-on-insulator (FD-SOI); WIDE TEMPERATURE-RANGE; DAC;

D O I：

10.1109/ESSCIRC53450.2021.9567784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we propose a fully integrated area-efficient bias generation system using a single input reference for a 2D quantum core structure comprising quantum dot arrays. The arrangement of biases initializes the quantum structure before a sophisticated quantum experiment can commence. The circuit area is 0.011 mm(2) and the power consumption is 220 mu W at 3.5 K with a 0.8 V supply in a 22 nm FD-SOI process. The proposed scheme can be readily extended to more complex quantum structures.

引用

页码：47 / 50

页数：4

共 6 条

[1] A Single-Electron Injection Device for CMOS Charge Qubits Implemented in 22-nm FD-SOI [J].

Bashir, Imran ;

Blokhina, Elena ;

Esmailiyan, Ali ;

Leipold, Dirk ;

Asker, Mike ;

Koskin, Eugene ;

Giounanlis, Panagiotis ;

Wang, Hongying ;

Andrade-Miceli, Dennis ;

Sokolov, Andrii ;

Koziol, Anna ;

Siriburanon, Teerachot ;

Staszewski, R. Bogdan .

IEEE SOLID-STATE CIRCUITS LETTERS, 2020, 3 :206-209

[2] CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement [J].

Blokhina, Elena ;

Giounanlis, Panagiotis ;

Mitchell, Andrew ;

Leipold, Dirk R. ;

Staszewski, Robert Bogdan .

IEEE ACCESS, 2020, 8 :4182-4197

[3]

Chen ZQ, 2011, IEEE INT SYMP CIRC S, P997

[4] A cryogenic DAC operating down to 4.2 K [J].

Rahman, M. T. ;

Lehmann, T. .

CRYOGENICS, 2016, 75 :47-55

[5]

van Staveren J, 2019, PROC EUR SOLID-STATE, P37

[6]

Vliex P, 2020, SSC LETT, V3, P218

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