Improvement in Light Extraction Efficiency of InGaN/GaN Blue Light Emitting Diodes Using Sidewall Texturing

被引：4

作者：

Kim, Ja-Yeon ^{[1
]}

Park, Jong-Rak ^{[2
]}

Kwon, Min-Ki ^{[2
]}

机构：

[1] Korea Photon Technol Inst KOPTI, Light Emitting Diode Convergence Team, Gwangju 500460, South Korea

[2] Chosun Univ, Dept Photon Engn, Gwangju 501759, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2019年 / 19卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Gallium Nitride; Light Emitting Diodes; Light Extraction Efficiency; Texturing;

D O I：

10.1166/jnn.2019.15975

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Herein, we reported the effects of the geometric morphology of the sidewall on the extraction efficiency of GaN-based light-emitting diodes (LEDs). We performed numerical analysis based on the ray-tracing method. We found that the extraction efficiency of the LEDs increased with the texturing of the sidewall. The light output intensity of the LEDs (at an injection current of 100 mA) increased by 13.8% after sidewall texturing. These results confirmed that the geometric morphology of the sidewall plays an important role in improving the extraction efficiency of LEDs.

引用

页码：2346 / 2348

页数：3

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