Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy

被引:59
作者
Ketterer, Bernt [1 ]
Heiss, Martin [1 ]
Livrozet, Marie J. [1 ]
Rudolph, Andreas [2 ]
Reiger, Elisabeth [2 ]
Fontcuberta i Morral, Anna [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Mat Semicond, Inst Mat, CH-1015 Lausanne, Switzerland
[2] Univ Regensburg, Inst Expt & Appl Phys, D-93053 Regensburg, Germany
来源
PHYSICAL REVIEW B | 2011年 / 83卷 / 12期
基金
欧洲研究理事会; 瑞士国家科学基金会;
关键词
III-V NANOWIRES; TEMPERATURE-DEPENDENCE; HETEROSTRUCTURES; SCATTERING; SEMICONDUCTORS; SUPERLATTICES; INP;
D O I
10.1103/PhysRevB.83.125307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of wurtzite GaAs below 1.523 eV.
引用
收藏
页数:6
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