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Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy
被引:59
作者:
Ketterer, Bernt
[1
]
Heiss, Martin
[1
]
Livrozet, Marie J.
[1
]
Rudolph, Andreas
[2
]
Reiger, Elisabeth
[2
]
Fontcuberta i Morral, Anna
[1
]
机构:
[1] Ecole Polytech Fed Lausanne, Lab Mat Semicond, Inst Mat, CH-1015 Lausanne, Switzerland
[2] Univ Regensburg, Inst Expt & Appl Phys, D-93053 Regensburg, Germany
来源:
PHYSICAL REVIEW B
|
2011年
/
83卷
/
12期
基金:
欧洲研究理事会;
瑞士国家科学基金会;
关键词:
III-V NANOWIRES;
TEMPERATURE-DEPENDENCE;
HETEROSTRUCTURES;
SCATTERING;
SEMICONDUCTORS;
SUPERLATTICES;
INP;
D O I:
10.1103/PhysRevB.83.125307
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of wurtzite GaAs below 1.523 eV.
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页数:6
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