Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy

被引：59

作者：

Ketterer, Bernt ^{[1
]}

Heiss, Martin ^{[1
]}

Livrozet, Marie J. ^{[1
]}

Rudolph, Andreas ^{[2
]}

Reiger, Elisabeth ^{[2
]}

Fontcuberta i Morral, Anna ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Mat Semicond, Inst Mat, CH-1015 Lausanne, Switzerland

[2] Univ Regensburg, Inst Expt & Appl Phys, D-93053 Regensburg, Germany

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 12期

基金：

欧洲研究理事会; 瑞士国家科学基金会;

关键词：

III-V NANOWIRES; TEMPERATURE-DEPENDENCE; HETEROSTRUCTURES; SCATTERING; SEMICONDUCTORS; SUPERLATTICES; INP;

D O I：

10.1103/PhysRevB.83.125307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of wurtzite GaAs below 1.523 eV.

引用

页数：6

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