Influence of Indium-Tin Oxide Additive on the Sintering Process and Conductivity of Na3Zr2Si2PO12 Solid Electrolyte

被引：11

作者：

Chen, Dan ^{[1
]}

Luo, Fa ^{[1
]}

Gao, Lu ^{[1
]}

Zhou, Wancheng ^{[1
]}

Zhu, Dongmei ^{[1
]}

机构：

[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Sch Mat Sci & Engn, Xian 710072, Shaanxi, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2017年 / 46卷 / 11期

关键词：

Na3Zr2Si2PO12; indium-tin oxide (ITO); sintering additive; conductivity; Nasicon; SODIUM-ION; ELECTRICAL-PROPERTIES; NASICON ELECTROLYTES; BATTERIES; MICROSTRUCTURE; TEMPERATURE;

D O I：

10.1007/s11664-017-5674-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Because of the poor sintering ability and low phase purity limit in the application of a Na3Zr2Si2PO12 solid electrolyte, it is important to find an effective way to obtain a pure and dense Na3Zr2Si2PO12 ceramic at reduced temperature. In this study, high conductive indium-tin oxide (ITO) was innovatively used as the sintering additive to improve the purity and density of the Na3Zr2Si2PO12 ceramic. The influence of ITO additive on density, phase, microstructure and conductivity of the Na3Zr2Si2PO12 ceramic was investigated. Archimedes method, x-ray diffraction, scanning electron microcopy and complex impedance spectroscopy were used as experimental techniques to evaluate the effect of the additive. The results show that the ITO sintering additive increases not only the purity and density but also the conductivity of the Na3Zr2Si2PO12 ceramic. The Na3Zr2Si2PO12 ceramic with 3 wt.% ITO additive sintered at 1150A degrees C for 4 h possesses a high density of 3.15 g/cm(3) and good conductivity of (3.95 +/- 0.12) x 10(-4) S/cm.

引用

页码：6367 / 6372

页数：6

共 24 条

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