Chemical characterization of DC-sputtered In2O3 films with a top SnO2 layer

被引：4

作者：

Bedoya-Calle, Alvaro ^{[1
,2
]}

Garcia-Mendez, Manuel ^{[1
,2
]}

Torres-Castro, Alejandro ^{[1
,2
]}

Shaji, Sadasivan ^{[1
,2
]}

Ortiz-Mendez, Ubaldo ^{[1
,2
]}

机构：

[1] Univ Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico

[2] UANL, Ctr Innovac Invest & Desarrollo Ingn & Tecnol, Apodaca 66600, NL, Mexico

来源：

JOURNAL OF NANO RESEARCH | 2015年 / 30卷

关键词：

OXIDE THIN-FILMS; INDIUM OXIDE; OPTICAL-PROPERTIES; GROWTH; THICKNESS;

D O I：

10.4028/www.scientific.net/JNanoR.30.86

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In2O3 thin films with a top layer of SnO2 were deposited onto glass substrates by DC reactive-magnetron sputtering. After deposition, In2O3/SnO2 samples were annealed in vacuum at 400 degrees C. Structural, optical, and chemical composition was investigated by X-ray diffraction, UV-Vis spectroscopy and XPS, respectively. X-ray data showed that films grow polycrystalline, where indium oxide crystallized in cubic as the main phase, with a preferential growth at the [0002] direction and lattice parameter of 10.11 angstrom. Signals of rhombohedral phase were also detected. XPS depth profiles show that tin coexists in Sn2+ and Sn4+, while indium maintains the In2O3 stoichiometry. Binding energy of Sn4+ bound to oxygen was detected at 468 eV while In2+ bound to oxygen at 444.7 eV. Nor tertiary compounds were detected at the In2O3/SnO2 interface, neither In or Sn in metallic state.

引用

页码：86 / 95

页数：10

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