Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 μm wavelength range around room

被引：53

作者：

Naehle, L. ^{[1
]}

Belahsene, S. ^{[2
]}

von Edlinger, M. ^{[1
]}

Fischer, M. ^{[1
]}

Boissier, G. ^{[2
]}

Grech, P. ^{[2
]}

Narcy, G. ^{[2
]}

Vicet, A. ^{[2
]}

Rouillard, Y. ^{[2
]}

Koeth, J. ^{[1
]}

Worschech, L. ^{[3
]}

机构：

[1] Nanoplus GmbH, D-97218 Gerbrunn, Germany

[2] Univ Montpellier 2, Inst Elect Sud, IES Cc 67, F-34095 Montpellier 5, France

[3] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 01期

关键词：

D O I：

10.1049/el.2010.2733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Distributed feedback (DFB) laser diodes based on the concept of lateral metal gratings fabricated on type-I quantum well GaInAsSb/AlGaInAsSb material are presented. Monomode emission in the 3.4 mu m wavelength range was achieved for the first time for a GaSb based DFB laser diode. Excellent sidemode suppression ratios beyond 30 dB are demonstrated in combination with a modehop-free tuning range around 8.5 nm. Using a specially developed polymer-free DFB processing route allowing improved heat dissipation, laser operation in continuous-wave mode was observed at temperatures up to around 20 degrees C.

引用

页码：46 / U70

页数：2

共 10 条

[1]

[Anonymous], NIST STANDARD REFERE

[2]

[Anonymous], 2010, HITRAN DATABASE

[3] Laser Diodes for Gas Sensing Emitting at 3.06μm at Room Temperature [J].