All solid-state photoelectrochemical cell with RbAg4I5 as the electrolyte

被引：3

作者：

Ohta, N ^{[1
]}

Takada, K ^{[1
]}

Sasaki, T ^{[1
]}

Watanabe, M ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2003年 / 6卷 / 09期

关键词：

D O I：

10.1149/1.1595331

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The photoelectrochemical reaction was investigated at a type of photosensitizing interface between a solid electrolyte and a semiconducting electrode. RbAg4I5 thin film was used as a solid electrolyte and n-Si single-crystal plate as a photoanode. This cell showed an incident photon flux to photocurrent conversion efficiency higher than 70% in a wide range of wavelengths from visible to near-infrared lights (500-900 nm). (C) 2003 The Electrochemical Society.

引用

页码：A187 / A189

页数：3

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