RTS Noise Characterization in Single-Photon Avalanche Diodes

被引：22

作者：

Karami, Mohammad Azim ^{[1
]}

Carrara, Lucio ^{[2
]}

Niclass, Cristiano ^{[3
]}

Fishburn, Matthew ^{[1
]}

Charbon, Edoardo ^{[1
,3
]}

机构：

[1] Delft Univ Technol, NL-2628 CN Delft, Netherlands

[2] ESPROS Photon, CH-6340 Baar, Switzerland

[3] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 07期

关键词：

Dark count rate (DCR); random telegraph signal (RTS); single-photon avalanche diodes (SPADs); RANDOM TELEGRAPH SIGNALS; DEFECTS;

D O I：

10.1109/LED.2010.2047234

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-mu m CMOS technology and in four proton-irradiated SPADs designed and fabricated in 0.35-mu m CMOS technology. The RTS characteristics are evaluated experimentally and verified theoretically with respect to bias and temperature.

引用

页码：692 / 694

页数：3

共 15 条

[1] DISCRETE CONDUCTANCE FLUCTUATIONS IN SILICON EMITTER JUNCTIONS DUE TO DEFECT CLUSTERING AND EVIDENCE FOR STRUCTURAL-CHANGES BY HIGH-ENERGY ELECTRON-IRRADIATION AND ANNEALING [J].