Free and bound exciton emission in CuInSe2 and CuGaSe2 single crystals

被引：37

作者：

Mudryi, AV ^{[1
]}

Bodnar, IV ^{[1
]}

Gremenok, VF ^{[1
]}

Victorov, IA ^{[1
]}

Patuk, AI ^{[1
]}

Shakin, IA ^{[1
]}

机构：

[1] Byelarussian Acad Sci, Inst Phys Solids & Semicond, Minsk 220072, BELARUS

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 53卷 / 3-4期

关键词：

luminescence; CuInSe2; CuGaSe2; exciton; energy gap;

D O I：

10.1016/S0927-0248(98)00012-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The free-exciton series with n = 1,2 in high perfect CuInSe2 and CuGaSe2 single crystals have been observed in photoluminescence. The exciton binding energy and direct energy gap are estimated as 9.5 meV and 1.7305 eV at 4.2 K for CuGaSe2. New values are determined for the band gap energy E-g = 1.0459 eV and for the excitonic binding energy 5.1 meV in CuInSe2 at 4.2 K. The temperature dependence of the n = 1 excitonic line between 4.2 and 300 K have been studied. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：247 / 253

页数：7

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