Single InAs1-xPx/InP quantum dots as telecommunications-band photon sources

被引：27

作者：

Elvira, D. ^{[1
]}

Hostein, R. ^{[1
]}

Fain, B. ^{[1
]}

Monniello, L. ^{[1
]}

Michon, A. ^{[1
]}

Beaudoin, G. ^{[1
]}

Braive, R. ^{[1
]}

Robert-Philip, I. ^{[1
]}

Abram, I. ^{[1
]}

Sagnes, I. ^{[1
]}

Beveratos, A. ^{[1
]}

机构：

[1] CNRS UPR20, Lab Photon & Nanostruct, FR-91460 Marcoussis, France

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 19期

关键词：

SELF-ASSEMBLED INAS; VAPOR-PHASE EPITAXY; MU-M; CRYPTOGRAPHY; INP(001); LASERS; PAIRS; INP;

D O I：

10.1103/PhysRevB.84.195302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of single InAs1-xPx/InP quantum dots are investigated by spectrally resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 mu m), the spectra display sharp distinct peaks resulting from the discrete electron-hole states in the dots, while in the long-wavelength range (above 1.45 mu m), these sharp peaks lie on a broad spectral background. In both regions, cascade emission observed by time-resolved photoluminescence confirms that the quantum dots possess discrete exciton and multiexciton states. Single photon emission is reported for the dots emitting at 1.3 mu m through antibunching measurements.

引用

页数：9

共 41 条

[1] Entangled photon pairs from semiconductor quantum dots [J].

Akopian, N ;

Lindner, NH ;

Poem, E ;

Berlatzky, Y ;

Avron, J ;

Gershoni, D ;

Gerardot, BD ;

Petroff, PM .

PHYSICAL REVIEW LETTERS, 2006, 96 (13)

[2] Quantum-dot exciton dynamics probed by photon-correlation spectroscopy [J].

Baier, M. H. ;

Malko, A. ;

Pelucchi, E. ;

Oberli, D. Y. ;

Kapon, E. .

PHYSICAL REVIEW B, 2006, 73 (20)

[3] Quantum information and computation [J].

Bennett, CH ;

DiVincenzo, DP .

NATURE, 2000, 404 (6775) :247-255

[4] Room temperature stable single-photon source [J].

Beveratos, A ;

Kühn, S ;

Brouri, R ;

Gacoin, T ;

Poizat, JP ;

Grangier, P .

EUROPEAN PHYSICAL JOURNAL D, 2002, 18 (02) :191-196

[5] Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) [J].

Brault, J ;

Gendry, M ;

Grenet, G ;

Hollinger, G ;

Desieres, Y ;

Benyattou, T .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2932-2934

[6] Growth of self-assembled InAs and InAsxP1-x dots on InP by metalorganic vapour phase epitaxy [J].

Carlsson, N ;

Junno, T ;

Montelius, L ;

Pistol, ME ;

Samuelson, L ;

Seifert, W .

JOURNAL OF CRYSTAL GROWTH, 1998, 191 (03) :347-356

[7] Quantum relays for long distance quantum cryptography [J].

Collins, D ;

Gisin, N ;

De Riedmatten, H .

JOURNAL OF MODERN OPTICS, 2005, 52 (05) :735-753

[8] Ultrabright source of entangled photon pairs [J].

Dousse, Adrien ;

Suffczynski, Jan ;

Beveratos, Alexios ;

Krebs, Olivier ;

Lemaitre, Aristide ;

Sagnes, Isabelle ;

Bloch, Jacqueline ;

Voisin, Paul ;

Senellart, Pascale .

NATURE, 2010, 466 (7303) :217-220

[9] QUANTUM CRYPTOGRAPHY BASED ON BELL THEOREM [J].

EKERT, AK .

PHYSICAL REVIEW LETTERS, 1991, 67 (06) :661-663

[10] Electronic structure of cleaved InAsP/InP(001) quantum dots measured by scanning tunneling spectroscopy [J].

Fain, B. ;

Girard, J. C. ;

Elvira, D. ;

David, C. ;

Beaudoin, G. ;

Beveratos, A. ;

Robert-Philip, I. ;

Sagnes, I. ;

Wang, Z. Z. .

APPLIED PHYSICS LETTERS, 2010, 97 (17)

← 1 2 3 4 5 →