Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

被引：314

作者：

Chabak, Kelson D. ^{[1
,2
]}

Moser, Neil ^{[3
]}

Green, Andrew J. ^{[4
]}

Walker, Dennis E. ^{[1
]}

Tetlak, Stephen E. ^{[1
]}

Heller, Eric ^{[5
]}

Crespo, Antonio ^{[1
]}

Fitch, Robert ^{[1
]}

McCandless, Jonathan P. ^{[4
]}

Leedy, Kevin ^{[1
]}

Baldini, Michele ^{[6
]}

Wagner, Gunter ^{[6
]}

Galazka, Zbigniew ^{[6
]}

Li, Xiuling ^{[2
]}

Jessen, Gregg ^{[1
]}

机构：

[1] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[3] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA

[4] Wyle Labs Inc, 4200 Colonel Glenn Hwy, Beavercreek, OH 45431 USA

[5] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[6] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 21期

基金：

美国国家科学基金会;

关键词：

DENSITY; LAYERS; POWER;

D O I：

10.1063/1.4967931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) beta-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and similar to 2 mu m wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1V during high-voltage operation. The I-ON/I-OFF ratio is greater than 10(5) and is mainly limited by high on-resistance that can be significantly improved. At V-G = 0, a finFET with 21 mu m gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600V without a field-plate. (C) 2016 Author(s).

引用

页数：5

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