Lateral short range ordering of step bunches in InGaAs/GaAs superlattices

被引：3
作者：
Hanke, M
Schmidbauer, M
Köhler, R
Kirmse, H
Pristovsek, M
机构：
[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
[2] Tech Univ Berlin, Inst Festkorperphys, D-10632 Berlin, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 04期
关键词：
D O I：
10.1063/1.1640786
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In the present paper we report on structural investigations of fivefold In0.2Ga0.8As/GaAs superlattices which have been grown by means of metal organic chemical vapor deposition on vicinal GaAs(001) substrates. Cross-sectional transmission electron micrographs exhibit an initially flat and nonfaceted grooved surface, while step bunching occurs during subsequent growth stages with an inclined vertical inheritance approximately 45degrees off the (001) direction. A reconstructed sample cross section on the base of high resolution x-ray diffraction data qualitatively confirms the local morphology proved by transmission electron microscopy. Moreover, a line shape analysis of diffusely scattered intensity using Gauss profiles indicates a lateral short range ordering of step bunches. (C) 2004 American Institute of Physics.
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页码：1736 / 1739
页数：4
相关论文
共 21 条
  • [1] NEW INSTABILITY IN MOLECULAR-BEAM EPITAXY
    DUPORT, C
    NOZIERES, P
    VILLAIN, J
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (01) : 134 - 137
  • [2] Dislocation strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffraction -: art. no. 165337
    Eymery, J
    Buttard, D
    Fournel, F
    Moriceau, H
    Baumbach, GT
    Lübbert, D
    [J]. PHYSICAL REVIEW B, 2002, 65 (16): : 1653371 - 1653376
  • [3] NATURAL SUPERSTEP FORMED ON GAAS VICINAL SURFACE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    FUKUI, T
    SAITO, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (03): : L483 - L485
  • [4] Strain induced vertical and lateral correlations in quantum dot superlattices
    Holy, V
    Springholz, G
    Pinczolits, M
    Bauer, G
    [J]. PHYSICAL REVIEW LETTERS, 1999, 83 (02) : 356 - 359
  • [5] Simulation and observation of the step bunching process grown on GaAs(001) vicinal surface by metalorganic vapor phase epitaxy
    Ishizaki, J
    Ohkuri, K
    Fukui, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1280 - 1284
  • [6] Bragg diffraction peaks in x-ray diffuse scattering from multilayers with rough interfaces
    Kaganer, VM
    Stepanov, SA
    Kohler, R
    [J]. PHYSICAL REVIEW B, 1995, 52 (23): : 16369 - 16372
  • [7] KASU M, 1992, JPN J APPL PHYS PT 2, V31, P864
  • [8] Lateral ordering of coherent Ge islands on Si(001) studied by triple-crystal grazing incidence diffraction
    Kegel, I
    Metzger, TH
    Peisl, J
    Schittenhelm, P
    Abstreiter, G
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (20) : 2978 - 2980
  • [9] PERIODIC FACETING ON VICINAL GAAS(110) SURFACES DURING EPITAXIAL-GROWTH
    KRISHNAMURTHY, M
    WASSERMEIER, M
    WILLIAMS, DRM
    PETROFF, PM
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (16) : 1922 - 1924
  • [10] Interactions between fluctuating steps on vicinal surfaces: Edge energy effects in reconstruction induced faceting
    Liu, DJ
    Weeks, JD
    [J]. PHYSICAL REVIEW LETTERS, 1997, 79 (09) : 1694 - 1697
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