Fabrication and electrical properties of graphene nanoribbons

被引：79

作者：

Bai, Jingwei ^{[1
]}

Huang, Yu ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Calif Nanosyst Inst, Los Angeles, CA 90095 USA

来源：

MATERIALS SCIENCE & ENGINEERING R-REPORTS | 2010年 / 70卷 / 3-6期

关键词：

Graphene; Nanoribbons; Band gap; Fabrication; Electrical properties; CHARGED-IMPURITY SCATTERING; CARBON NANOTUBES; QUANTUM DOTS; LARGE-AREA; ELECTRONIC-PROPERTIES; RAMAN-SPECTROSCOPY; HALF-METALLICITY; BERRYS PHASE; SINGLE-LAYER; TRANSISTORS;

D O I：

10.1016/j.mser.2010.06.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Graphene is a semimetal with a zero band gap, and therefore cannot be used for effective field-effect transistors (FETs) at room temperature. Theoretical study predicted an appreciable band gap opening with the formation of nanometer graphene nanoribbons (GNRs), providing opportunities for graphene based transistor application. In this paper, we review recent developments in fabrication and electrical property studies of GNRs. We first study the theoretic prediction of electrical structures in ideal graphene nanoribbons which is closely related to the edge configurations. Different experimental efforts to fabricate GNRs are introduced and the electrical transport behaviors of fabricated GNR device are described. We then investigate the effect of edge disorder and charge impurities on real device performance, in which Anderson localization and Coulomb blockade effect are discussed to explain the observed transport behaviors. Other approaches such as symmetry broken to induce band gap on bulk graphene are also described. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：341 / 353

页数：13

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