Chemical profile and magnetoresistance of Ga1-xMnxAs/GaAs/AlAs/GaAs/Ga1-xMnxAs tunnel junctions -: art. no. 075206

被引：36
|
作者：
Mattana, R
Elsen, M
George, JM
Jaffrès, H
Van Dau, FN
Fert, A
Wyczisk, MF
Olivier, J
Galtier, P
Lépine, B
Guivarc'h, A
Jézéquel, G
机构：
[1] CNRS THALES, Unite Mixte Phys, F-91404 Orsay, France
[2] Ctr Univ Paris Sud, F-91405 Orsay, France
[3] THALES Res & Technol France, F-91404 Orsay, France
[4] Univ 6627 PALMS, Unite Mixte Rech, CNRS, F-35042 Rennes, France
来源：
PHYSICAL REVIEW B | 2005年 / 71卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.71.075206
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the manganese diffusion depth and the tunneling magnetoresistance (TMR) properties in Ga1-xMnxAs/GaAs/AlAs/GaAs/Ga1-xMnxAs tunnel junctions. Auger electron spectroscopy and transmission electron microscopy analysis show that the Mn diffusion depth is less than 15 angstrom. TMR measurements have been performed on tunnel junctions where different GaAs spacer thicknesses are inserted between the Ga1-xMnxAs electrode and AlAs tunnel barrier. Our results suggest that the GaAs thickness plays a crucial role on the temperature dependence of the TMR.
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页数：8
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