Improved MOSFET characterization technique for single channel length, scaled transistors

被引：8

作者：

Ferdousi, Fahmida ^{[1
]}

Rios, Rafael ^{[1
]}

Kuhn, Kelin J. ^{[2
]}

机构：

[1] Intel Corp, Components Res, Hillsboro, OR 97124 USA

[2] Cornell Univ, Ithaca, NY 14853 USA

来源：

SOLID-STATE ELECTRONICS | 2015年 / 104卷

关键词：

Mobility; Nonlinear charge; Source-drain resistance;

D O I：

10.1016/j.sse.2014.10.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The MOSFET characterization technique proposed here permits parameter extraction from ultra-short channel single length devices. The technique is based on an improved charge correction which allows extension of the gate overdrive to lower range and leads to better accuracy of extracted quantities such as effective mobility, threshold voltage, and effective parasitic resistance. The method is applicable to both planar and non-planar technologies at highly scaled gate lengths. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：44 / 46

页数：3

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