Improving upon Pulse-to-Pulse stability in GaN RADAR amplifiers compromised by the presence of GaN trapping effects.

In this paper we report on the characterization of GaN Power devices for sequential inter-pulse stability factors attributable to thermal and trapping effects in the transistor. The key observations are critical to successful design and insertion of GaN based semiconductor products in future RADAR applications. Comparison data between different devices and their application will be highlighted as part of the work. A novel application and pre-correction circuit and methodology will also be presented along with results. Use of the pre-correction circuitry will also allow the RADAR system designer to apply trap impaired GaN amplifiers when multiple or staggered-PRF strategies are employed in the RADAR system.