CuInSe2 formation through Cu2Se-In3Se2 multilayer structures prepared by thermal evaporation technique

被引：7
作者：
Mohan, A. [1 ]
Rajesh, S. [2 ]
Srikesh, G. [3 ]
机构：
[1] Karunya Univ, Dept Phys, Thin Film Lab, Coimbatore 641114, Tamil Nadu, India
[2] Karunya Univ, Dept Nanosci & Technol, Coimbatore 641114, Tamil Nadu, India
[3] Karunya Univ, Dept Chem, Coimbatore 641114, Tamil Nadu, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 93卷
关键词：
Thermal evaporation; Quantum size effect; Annealing; Photoluminescence; FILM SOLAR-CELLS; THIN-FILMS; RAMAN-SPECTROSCOPY; OPTICAL-PROPERTIES;
D O I：
10.1016/j.spmi.2016.01.034
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The current study investigates the Cu2Se/In3Se2 multilayer structure deposited by thermal evaporation technique for CIS solar cells with different number of layers. The X-ray diffraction pattern reveals that the layer thickness improves the crystallinity and the formation of CIS for the 30 layer films through photoluminescence (PL) emission. The optical band gap values are found to be 2.87 eV and 2.79 eV for 5 and 10 period films respectively. The splitted band gap ranging 1.30 and 2.25 eV for 15 periods and decrease in the band gap values are due to large grains. This splitting is due to quantum size effect and CIS composite formation. The vibration frequency at 174.54 cm(-1) is evident for formation of CuInSe2 Chalcopyrite phase. (C) 2016 Elsevier Ltd. All rights reserved.
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页码：261 / 268
页数：8
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