Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

被引：3

作者：

Xu Xiao-Bo ^{[1
]}

Zhang He-Ming ^{[1
]}

Hu Hui-Yong ^{[1
]}

Li Yu-Chen ^{[1
]}

Qu Jiang-Tao ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2011年 / 20卷 / 10期

关键词：

avalanche multiplication; heterojunction bipolar transistor; thin film silicon-on-insulator; SiGe; TECHNOLOGY;

D O I：

10.1088/1674-1056/20/10/108502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, we propose an analytical avalanche multiplication model for the next generation of SiGe silicon-on-insulator (SOI) heterojunction bipolar transistors (HBTs) and consider their vertical and lateral impact ionizations for the first time. Supported by experimental data, the analytical model predicts that the avalanche multiplication governed by impact ionization shows kinks and the impact ionization effect is small compared with that of the bulk HBT, resulting in a larger base-collector breakdown voltage. The model presented in the paper is significant and has useful applications in the design and simulation of the next generation of SiGe SOI BiCMOS technology.

引用

页数：6

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