Mechanical characterization and modelling of Lorentz force based MEMS magnetic field sensors

被引:9
作者
Gkotsis, P. [1 ]
Lara-Castro, M. [2 ]
Lopez-Huerta, F. [2 ]
Herrera-May, A. L. [2 ]
Raskin, J. -P. [1 ]
机构
[1] Catholic Univ Louvain, ICTEAM Inst, Dept Elect Engn, Louvain La Neuve, Belgium
[2] Univ Veracruzana, Ctr Invest Micro & Nanotecnol, Boca Del Rio 94294, Veracruz, Mexico
关键词
Magnetic field sensing; MEMS resonators; Quality factor; Damping; TORSIONAL RESONATORS;
D O I
10.1016/j.sse.2015.02.004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work we present experimental results from dynamic and static tests on miniature magnetic field sensors which are based on Micro Electro Mechanical Systems (MEMS) technologies. These MEMS magnetometers were fabricated on SOI wafers using Si bulk micromachining techniques and they operate at the first resonant frequency under the action of the Lorentz force which arises when a current flows through them in the presence of an external magnetic field. Sensing is based on piezoresistive principles and high sensitivity is expected from devices that show high total quality factors Q(tot). We investigate here the energy loss mechanisms and the temperature rise due to Joule heating effects in the resonators of the magnetometers by performing tests both in air and under vacuum conditions. Testing was performed using laser Doppler Vibrometry and white light interferometry. At each pressure different driving currents have been applied and Q(tot) was extracted. It is found that Q(tot) varies with pressure between two limiting values: a low one in air which was between 17 and 500 for the tested devices and a high one in vacuum which in the case of one of our devices was equal to 2800. The amplitude of the applied current is also affecting the Q value at a certain pressure due to the rise of thermal stress in the resonating structures. The sensitivity of the sensors in air was experimentally measured using a Helmholtz coil and an oscilloscope and values between 72 mV T-1 and 513 mV T-1 were obtained from the tested devices. We further attempt to estimate the temperature rise in the devices due to Joule heating effects by combining the topography scans which were experimentally obtained with results from thermomechanical analysis of the sensors using Finite Element Modelling. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:68 / 77
页数:10
相关论文
共 33 条
  • [1] A resonant micromachined magnetic field sensor
    Bahreyni, Behraad
    Shafai, Cyrus
    [J]. IEEE SENSORS JOURNAL, 2007, 7 (9-10) : 1326 - 1334
  • [2] Squeeze film air damping in MEMS
    Bao, Minhang
    Yang, Heng
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 2007, 136 (01) : 3 - 27
  • [3] Monolithic piezoresistive CMOS magnetic field sensors
    Beroulle, V
    Bertrand, Y
    Latorre, L
    Nouet, P
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 2003, 103 (1-2) : 23 - 32
  • [4] Braginsky V. B., 1985, SYSTEMS SMALL DISSIP
  • [5] Field-Concentrator-Based Resonant Magnetic Sensor With Integrated Planar Coils
    Brugger, Simon
    Paul, Oliver
    [J]. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2009, 18 (06) : 1432 - 1443
  • [6] Multimode thermoelastic dissipation
    Chandorkar, Saurabh A.
    Candler, Robert N.
    Duwel, Amy
    Melamud, Renata
    Agarwal, Manu
    Goodson, Kenneth E.
    Kenny, Thomas W.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (04)
  • [7] Small Magnetic Sensors for Space Applications
    Diaz-Michelena, Marina
    [J]. SENSORS, 2009, 9 (04) : 2271 - 2288
  • [8] Minimizing 1/f noise in magnetic sensors using a microelectromechanical system flux concentrator
    Edelstein, AS
    Fischer, GA
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) : 7795 - 7797
  • [9] Magnetic field measurements with a novel surface micromachined magnetic-field sensor
    Emmerich, H
    Schöfthaler, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (05) : 972 - 977
  • [10] Resonant mechanical magnetic sensor in standard CMOS
    Eyre, B
    Pister, KSJ
    Kaiser, W
    [J]. IEEE ELECTRON DEVICE LETTERS, 1998, 19 (12) : 496 - 498