Influence of sputtering parameters on crystalline structure of ZnO thin films

被引：66

作者：

Tvarozek, V.

Novotny, I.

Sutta, P.

Flickyngerova, S.

Schtereva, K.

Vavninsky, E.

机构：

[1] Slovak Tech Univ Bratislava, Dept Microelect, Bratislava 81219, Slovakia

[2] Univ W Bohemia, New Technol Res Ctr, Plzen 30614, Czech Republic

[3] Univ Rousse, Dept Elect, BG-7017 Rousse, Bulgaria

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 24期

关键词：

rE diode sputtering; ZnO thin films; Crystalline structure;

D O I：

10.1016/j.tsf.2007.03.125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The relations between the sputtering parameters and the crystalline microstructure of ZnO thin films are presented. The energetic bombardment of substrate by neutral atoms, ions and electrons during sputtering is characterized by total energy flux density which affects the film. This parameter can be estimated by RF power, substrate bias voltage and concentration of reactive gases. Substrate temperature and total energy flux density are the major parameters which have a significant influence on ZnO thin film crystalline structure. (c) 2007 Elsevier B.V All rights reserved.

引用

页码：8756 / 8760

页数：5

共 12 条

[1] Fundamental understanding and modeling of reactive sputtering processes [J].