Thermal route for chemical modification and photoluminescence stabilization of porous silicon

被引:0
|
作者
Boukherroub, R
Morin, S
Wayner, DDM
Lockwood, DJ
机构
[1] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2000年 / 182卷 / 01期
关键词
D O I
10.1002/1521-396X(200011)182:1<117::AID-PSSA117>3.0.CO;2-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper. describes photoluminescence (PL) stabilization through chemical modification of freshly prepared porous silicon (PSi) surfaces. As-anodized PSi surfaces react with l-alkenes, non-conjugated dienes and aldehydes at elevated temperatures to form organic monolayers covalently bonded to the surface. This thermal route is very general and tolerant of different functional groups. We have characterized these organic monolayers using diffuse reflectance infrared Fourier-transform (DRIFT), Auger and Raman spectroscopies. The PL intensity and peal; energy of the as-anodized PSi is not affected by the chemical functionalization. Aging these derivatized PSi samples in ambient air has I-io effect on the FL. In fact, it is completely preserved even when they are steam treated for six weeks at 70 degreesC and 100% humidity. This treatment completely destroys the structural integrity of H-terminated PSi.
引用
收藏
页码:117 / 121
页数:5
相关论文
共 50 条
  • [1] CHEMICAL MODIFICATION OF THE PHOTOLUMINESCENCE QUENCHING OF POROUS SILICON
    LAUERHAAS, JM
    SAILOR, MJ
    SCIENCE, 1993, 261 (5128) : 1567 - 1568
  • [2] Long-time stabilization of porous silicon photoluminescence by surface modification
    Mahmoudi, Be.
    Gabouze, N.
    Guerbous, L.
    Haddadi, M.
    Beldjilali, K.
    JOURNAL OF LUMINESCENCE, 2007, 127 (02) : 534 - 540
  • [3] Photoluminescence and chemical modification of silicon-based porous alumina
    Yang, Y
    Chen, HL
    Bao, XM
    ACTA CHIMICA SINICA, 2003, 61 (03) : 320 - 324
  • [4] Effect of thermal annealing and chemical treatment on the photoluminescence of porous silicon
    E. A. Shelonin
    M. V. Naidenkova
    A. M. Khort
    A. G. Yakovenko
    A. A. Gvelesiani
    I. E. Maronchuk
    Semiconductors, 1998, 32 : 443 - 445
  • [5] Effect of thermal annealing and chemical treatment on the photoluminescence of porous silicon
    Shelonin, EA
    Naidenkova, MV
    Khort, AM
    Yakovenko, AG
    Gvelesiani, AA
    Maronchuk, IE
    SEMICONDUCTORS, 1998, 32 (04) : 443 - 445
  • [6] Photoluminescence stabilization of anodically-oxidized porous silicon layers by chemical functionalization
    Boukherroub, R
    Wayner, DDM
    Lockwood, DJ
    APPLIED PHYSICS LETTERS, 2002, 81 (04) : 601 - 603
  • [7] Stabilization of the photoluminescence from porous silicon: The competition between photoluminescence and dissolution
    Dudel, FP
    Gole, JL
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) : 402 - 406
  • [8] Chemical treatment of porous silicon and modification of its photoluminescence due to continuous laser exposure
    Kostishko, BM
    Orlov, AM
    Emelyanova, TG
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1995, 21 (19): : 32 - 37
  • [9] Stabilization of photoluminescence of porous silicon with nonaqueous anodic oxidation
    Tokyo Metropolitan Univ, Tokyo, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 11 (5730-5734):
  • [10] Stabilization of photoluminescence of porous silicon with nonaqueous anodic oxidation
    Shimura, M
    Katsuma, M
    Okumura, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11): : 5730 - 5734