Wideband mechanical response of a high-Q silicon double-paddle oscillator

被引:22
作者
Borrielli, A. [1 ,2 ]
Bonaldi, M. [1 ,2 ]
Serra, E. [3 ]
Bagolini, A. [4 ]
Conti, L. [5 ]
机构
[1] Inst Mat Elect & Magnetism, Nanosci Trento FBK Div, I-38123 Povo, Trento, Italy
[2] Ist Nazl Fis Nucl, Grp Collegato Trento, I-38123 Povo, Trento, Italy
[3] FBK Univ Trento, Interdisciplinary Lab Computat Sci LISC, I-38123 Povo, Trento, Italy
[4] Microtechnol Lab FBK CMM, I-38123 Povo, Trento, Italy
[5] Ist Nazl Fis Nucl, Sez Padova, I-35131 Padua, Italy
基金
欧洲研究理事会;
关键词
SINGLE-CRYSTAL SILICON;
D O I
10.1088/0960-1317/21/6/065019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present experimental results of operation of a silicon double-paddle oscillator, namely the mechanical transfer function of the system and the quality factor of its resonant modes. We also describe the fabrication process, where efforts have been devoted to ensure strict dimensional tolerances for a proper functioning of the oscillator, and the setup used to drive the oscillation of the device and to detect its displacement with a sensitivity better that 10(-1)2 m Hz(-1/2) in the range 0.1-5 kHz. We observed mechanical quality factors higher than 10(5) in vacuum at room temperature for two specific resonant modes, while for all other modes the quality factor remains in the range 10(3)-10(4). These values are in good agreement with the limit set by the thermoelastic dissipation in the device, evaluated by a finite element procedure, and demonstrate that our setup allows us to control losses coming from clamping and residual gas effects.
引用
收藏
页数:10
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