Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect

被引：43

作者：

Kang, T. Y. ^{[2
]}

Xiu, Y. Y. ^{[1
]}

Liu, C. Z. ^{[1
,3
]}

Hui, L. ^{[1
]}

Wang, J. J. ^{[1
]}

Tong, W. P. ^{[2
]}

机构：

[1] Shenyang Aerosp Univ, Shenyang 110136, Liaoning, Peoples R China

[2] Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang, Peoples R China

[3] Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 05期

基金：

美国国家科学基金会;

关键词：

Bi segregation; Interconnect; Kinetics; Intermetallic compound growth; LEAD-FREE SOLDERS; CU;

D O I：

10.1016/j.jallcom.2010.10.040

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

There was a sudden increase of intermetallic compound (IMC) Cu6Sn5 growth rate in the eutectic Sn58wt. %Bi/Cu joint during aging process. With aging time increasing, Bi accumulated at the Cu3Sn/Cu interface and gradually induced the fracture mode of the joint to change from ductile to brittle one along this interface. Bi segregation enhanced IMC Cu6Sn5 growth by means of promoting the interfacial reaction at Cu3Sn/Cu interface, which was concluded from IMCs (Cu6Sn5 and Cu3Sn) growth behavior for pure Sn/Cu and Sn10wt. %Bi/Cu interconnects at the same temperature. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1785 / 1789

页数：5

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