Direct ion beam deposition of hard (>30 GPa) diamond-like films from RF inductively coupled plasma source

被引:26
作者
Druz, B
Zaritskiy, I
Hoehn, J
Polyakov, VI
Rukovishnikov, AI
Novotny, V
机构
[1] Veeco Instruments Inc, Plainview, NY 11803 USA
[2] Seagate Technol, Minneapolis, MN 55435 USA
[3] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 103907, Russia
[4] Terastor, San Jose, CA 95131 USA
关键词
diamond-like carbon; conductivity; optical bandgap; point defects;
D O I
10.1016/S0925-9635(00)00547-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond-like carbon (DLC) films were deposited on Si substrates using highly reproducible direct ion beam deposition from a RF inductively coupled hydrocarbon plasma source. Combinations of gases, such as C2H4 and C2H4-CH4, were used to form the plasma. The mechanical, electrical and optical properties of the films were examined as a function of the deposition conditions and CH4 content in gas mixture. Hard DLC films with a hardness up to 40 GPa were obtained. By variation of the C2H4/CH4 ratio, hardness of the films can be adjusted in the range 22-40 GPa. Highly reproducible deposition rates (< 5% from run to run for over several 100 h) have been achieved. The deposition uniformity was within 5% over 9-inches round. For investigation of the bulk and surface electrically active defects (density, activation energies and capture cross-sections), charge-based deep-level transient spectroscopy (Q-DLTS) was used. (C) 2001 Elsevier Science B.V. Ah rights reserved.
引用
收藏
页码:931 / 936
页数:6
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